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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1073 DESCRIPTION *With TO-220 package *High DC current gain *DARLINGTON *Low saturation voltage APPLICATIONS *Audio power amplifiers *Relay and solenoid drivers *Motor controls *General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-continuous Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 300 250 30 4 0.3 60 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rjc CHARACTERISTICS Thermal resistance junction to case MAX 2.0 UNIT /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1073 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA ; IE=0 250 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ; IC=0 30 V VCEsat Collector-emitter saturation voltage IC=1A;IB=10mA 1.5 V VBEsat Base-emitter saturation voltage IC=1A;IB=10mA 2.0 V ICBO Collector cut-off current VCB=300V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=30V; IC=0 0.1 mA hFE DC current gain IC=2A ; VCE=2V 1000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1073 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
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